Infineon Technologies is to develop a two-terminal semiconductor device that acts as a circuit breaker for hundreds of volts and amps: doubling the performance of its mains-voltage super-junction ...
The "UnitedSiC UJN1205K 1200V SiC JFET Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. This report presents a deep technology analysis of the UJN1205K device, ...
Hitachi has developed a SiC-based ‘TED-MOS’ (Trench-Etched-Double-Diffused MOS) device using a fin-structured trench MOSFET based on the conventional DMOS-FET. An energy saving of 50% over a DMOS-FET ...
What is a power MOSFET? We all know how to use a diode to implement a switch. But we can only switch with it, not gradually control the signal flow. Furthermore, a diode acts as a switch depending on ...
This article presents the efficient and reliable technology for high voltage switching. The document describes the device concept and control, the characteristics, as well as an experimental results ...
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