Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...

The first product released – AOK040A60 is a 600V 40mOhm αMOS5 low ohmic device with the industry-standard TO-247 package tailored to address the thermal challenges of today’s high-power AC/DC, DC/DC, ...

SEOUL, South Korea, May 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation (MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor ...

The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

Malvern, Pa. — Vishay Intertechnology, Inc. has released a single-chip power MOSFET and Schottky diode device that is said to improve operational efficiency by up to 6% in DC/DC conversion ...

USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...

Failure Mechanism Detection Algorithm With MOSFET Body Diode A defect diagnosis and physical damage detection method for electronic packaging are studied by measuring the thermal impedance through the ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...