KYOTO, Japan &#151 Magneto-resistive random access memory (MRAM) technology continues to pick up critical momentum, with the MRAM Alliance between IBM and Infineon Technologies announcing prototype ...

At the recent 2020 Symposia on VLSI Technology and Circuits, Intel presented a paper on a CMOS-compatible spin-orbit torque MRAM (SOT-MRAM) device. Still in R&D, SOT-MRAM is a next-generation MRAM ...

At the 2025 Symposium on VLSI Technology and Circuits (VLSI 2025), a unique world-class international conference where experts from industry and academia discussed state-of-the-art semiconductor ...

Imec will use this year’s 2018 Symposia on VLSI Technology and Circuits, to demonstrate for the first time the possibility of fabricating state-of-the-art spin-orbit torque MRAM (SOT-MRAM) devices on ...

The IEEE puts on a series of conferences that focus on semiconductor devices, heterogenous integration and other nanotechnologies, with sessions on solid state memory technologies. These include the ...

Professor Tetsuo Endoh, leading a group of researchers at Tohoku University, has announced the development of an MTJ (Magnetic Tunnel Junction) with 10 ns high-speed write operation, sufficient ...

MRAM chips are becoming more attractive than the projections suggest, and the company should benefit from that. The market is set to grow at high rates for the next decade. The company is very strong ...