Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
Samsung was the first fab to launch a 3nm process in mid-2022, beating TSMC to market by about six months. Plus, its 3nm node offers gate-all-around (GAA) transistors, which none of its rivals have ...
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