NextBigFuture

Major breakthrough in transistor size by creating gate only 1 nanometer long

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...
University of California

Smallest transistor ever made by Berkeley Lab

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...
Semiconductor Engineering

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
Popular Mechanics

Scientists Have Made Transistors Smaller Than We Thought Possible

Scientists at the Lawrence Berkeley National Laboratory, Stanford University, and the University of Texas at Dallas have managed to build a transistor gate that is only 1 nanometer in length. Their ...
AZOM

1D Metallic Gate Electrodes for Ultra-Miniature Transistors

A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
EDN

Agere reports high-k breakthrough for next-generation transistor gates

WASHINGTON–Agere Systems Inc. today said its researchers have built the industry's smallest transistors using hafnium oxide instead of traditional silicon dioxide in the gate-insulator layer. The high ...
ZDNet

Intel experiments with 3D transistors

Transistors, the building blocks of microprocessors, may have only one place to go in the future according to Intel researchers: up. At a presentation in Japan this week, the Santa Clara, Calif.-based ...
Ars Technica

Transistor with a 1nm gate size is the world’s smallest

Conventional silicon-based electronics are rapidly approaching a fundamental barrier. Below about five nanometers, quantum effects make their behavior unpredictable. That’s led to research into ...
Ars Technica

A transistor made using two atomically thin materials sets size record

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...
EDN

Insulated Gate Bipolar Transistor Basics

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
Semiconductor Engineering

From FinFETs To Gate-All-Around

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...
NextBigFuture

Intel 22nm 3-D Tri-Gate Transistor Technology

* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...